GaN Technology
Main detection principle (2DEG Sensor, PATENT PENDING)
- Proteins (antibodies/antigens) are adsorbed on the specially prepared surface
- DNA/RNA can be attached via Biotin labelling on the Streptavidin-coated surface
- Sensor measures molecular interactions as a change in electrical current through the 2DEG channel
- Binding event is monitored in real-time; no washing or further detection steps are needed
- Sensor is powered and read-out by RFID-technology, no additional device needed
- Sensors are disposable after single use; sensor material is non-toxic
- Multiplexing capabilities with many sensitive areas on single chip for different biomarkers
Main sensor material principle
- The AlGaN/GaN sensor uses a two-dimensional electron gas (2DEG) for detection formed at the 2D-interface between AlGaN and GaN monocrystal solid states.
- Voltage is applied to a 2DEG-channel and electrical current flows through 2DEG noise free
- 2DEG is super sensitive to any electric field and energy. Thus, any smallest change in surface chemical potential like molecular binding (e.g. antigen/antibody interaction) at the AlGaN-surface causes a change of electric current via 2DEG-channel enabling unprecedent sensitivity
- No intrinsic noise is amplified together with the signal!
- Charges down to few electrons can be observed within nano-seconds!
GaN-Based Sensor Technology for Wafer Scale
Gallium Nitride (GaN)-based sensor technology at wafer scale offers remarkable advantages in scalability and performance. By integrating GaN sensors on large wafers, we achieve high precision and efficiency at reduced costs, enabling mass production of ultra-sensitive, compact sensors for advanced applications across industries. This approach revolutionizes the development of sensor arrays, driving innovation in sectors like healthcare, automotive, and environmental monitoring with scalable, high-performance solutions.